Integrated Optical Wavelength Converters and Routers for ...
Integration Platforms University of California Santa Barbara Chip-Scale WDM Program Task Area: Integration Platforms Wavelength Converter Enhancements Using QWI James Raring, Erik Skogen, Jon Barton, Larry Coldren University of California Santa Barbara Chip-Scale WDM Program Overview Objective Develop a novel QWI process for the fabrication of CQW wavelength-agile PICs to allow for the monolithic integration of high power SGDBRs with other optimized components
Approach Impurity-free vacancy-enhanced QWI Accomplishments Achieved 3 band edges in single PIC Monolithically integrated optimized SGDBRs with EAMs Main issues OEIC: Improve EAM design for better absorption and bandwidth AOWC: Optimize SOA design for low saturation power University of California Santa Barbara Chip-Scale WDM Program Quantum Well Intermixing Theory Impurity-free vacancy-enhanced quantum-well-intermixing Theory Create vacancies Thermal process to diffuse vacancies Vacancies allow atoms to exchange positions
Smears the well/barrier interface, increasing the quantized energy level University of California Santa Barbara g1 g2 Chip-Scale WDM Program Quantum Well Intermixing Process Novel QWI process Ability to achieve multiple band edges with a single implant University of California Santa Barbara Chip-Scale WDM Program
Offset Vs CQW - 50% larger confinement factor in CQW 50% more modal gain University of California Santa Barbara Chip-Scale WDM Program Advantages for Wavelength Converters Low Threshold High Power SGDBR Lasers - 50% more modal gain with centered quantum wells - Higher overall efficiency AOWC Low saturation power SOAs -Enhanced cross-gain modulation University of California Santa Barbara OEIC Efficient EA Modulator - Higher /V with shallow MQWs -Reduced length and higher speed
Chip-Scale WDM Program Initial SGDBR/EAM Results: PL Achieved three desired band edges across wafer Monolithically integrated widely-tunable laser with EAM University of California Santa Barbara Chip-Scale WDM Program SGDBR CQW BRS Cross Section 1.7um ridge 7 x 65 wells 8 x 80 barriers
Proton Implant 10um mask in gain 4um mask in EAM University of California Santa Barbara Chip-Scale WDM Program SGDBR Results Power Out and Voltage Vs Current 1.6 13.5 1.2 9 0.8 4.5 0.4
Ith = 8.2 mA i = 85% Voltage (V) Power (mW) 18 Slope Efficiency = 25% 17 mW @ 100 mA ia = 14.4 1/cm ip = 2.8 1/cm 0 0 20 40 60 80 0
100 Current (mA) University of California Santa Barbara Chip-Scale WDM Program EAM Frequency Response 175um EAM Frequency Response 5 5 0 0 Normalized Response (dB) Normalized Response (dB) 125um EAM Frequency Response
5 10 Frequency (GHz) 15 20 0 5 10 15 20 Frequency (GHz) Capacitance due to homojunction can be reduced with tighter implant Implanted EAM appears to be limited by pad capacitance - No pad capacitance on wavelength converter design
University of California Santa Barbara Chip-Scale WDM Program EAM DC Absorption 125um EAM DC Absorption 5 Extinction (dB) 0 -5 7QW (1550nm) 10QW (1555nm) -10 -15 -20 -25 -8
-7 -6 -5 -4 -3 -2 -1 0 EAM Bias (V) -Add quantum wells for increased absorption -Results in ~ 1V/10dB with 200um length in 10 QW University of California Santa Barbara Chip-Scale WDM Program
Future Work Improve modulator bandwidth for OEIC Minimize EAM parasitics Low k dielectric under interconnect for reduced capacitance Tighter implant profiles for reduced homojunction capacitance Explore traveling wave designs EA and Mach-Zehender modulators Improve EAM efficiency for OEIC Redesign active region for increased absorption Develop technology for higher-efficiency AOWC Design SOAs with low saturation power Fabricate OEIC wavelength converters using QWI Fabricate AOWC wavelength converters using QWI University of California Santa Barbara Chip-Scale WDM Program
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